Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Abstract: The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties ...
The new 1200 V SiC MOSFET power modules in SOT-227 packages target high-efficiency automotive, energy, and industrial systems. Vishay Intertechnology has introduced five new 1200 V silicon carbide ...
There are a number of great libraries out there to allow IoT devices to connect to the internet using a variety of network protocols. For cellular-enabled devices, the choice typically falls on ...
Devices offer drop-in replacements for competing solutions in medium to high frequency applications Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for ...
MALVERN, Pa., Jan. 28, 2026 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) today introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high ...
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an industry-standard SOT-227 form factor for medium to high frequency power ...
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