(a) Schematic of the concealable PUF using V-NAND flash memory.(b) Circuit diagram of V-NAND flash memory.(c) Description of the GIDL erase method. Seoul National University College of Engineering ...
A new technical paper titled “Concealable physical unclonable functions using vertical NAND flash memory” was published by researchers at Seoul National University and SK hynix. The paper proposes “a ...
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TL;DR: Samsung plans to launch its 10th Gen V-NAND in 2026, featuring a 400-layer configuration using Bonding Vertical (BV) NAND technology for higher data storage, performance, and reliability. This ...
A new technical paper titled “Impact of Strain on Sub-3 nm Gate-all-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach” was published by researchers at Hanyang University ...
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