Researchers from Peking University say their resistive random-access memory chip may be capable of speeds 1,000 faster than the Nvidia H100 and AMD Vega 20 GPUs.
Abstract: We present a framework for design technology co-optimization (DTCO) of the main memory system with one transistor-one capacitor (1T1C) ferroelectric random access memory (FERAM) as an ...
October 7 - Since the Paris Agreement was adopted in 2015, corporate climate commitments have surged. Net-zero pledges are now common among the world’s largest companies, with major players across ...
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...
Abstract: In this paper, we introduce a novel framework for multiple access code design under the finite blocklength regime in multi-input and multi-output (MIMO) systems, termed coded pattern ...
The month-long stormwater management construction project will take place at the parking lot adjacent to the Ellen T. Mitchell Bathhouse.
The Pentagon has altered its new rules restricting press access in the building, clarifying that credentialed journalists will not need approval from Defense Department (DOD) officials before ...
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