A new technical paper titled “Lateral Semiconductor–Free-Space Gate Transistors” was published by researchers at KAUST and ...
Abstract: This work explored the optimum gate structures of 1.2-kV SiC MOSFETs by analyzing avalanche capabilities using unclamped inductive switching tests and short-circuit capabilities. It found ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback