These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...

The objective of the circuit is to create a power supply using V-MOSFET technology to support amplifiers while producing 100 Watts power output. Vertical Metal Oxide Semiconductor Field Effect ...

NoMIS Power has claimed a breakthrough in improving the short-circuit withstand time (SCWT) of silicon-carbide (SiC) MOSFETs. This addresses one of the key challenges limiting the widespread adoption ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation ...

Find a downloadable version of this story in pdf format at the end of the story. TYPICAL HIGH-SIDE, n-channel, hot-swap “soft-switch” systems use a charge pump to drive the gate of an external MOSFET ...

An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...

In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...

Taiwan-based power MOSFET and diode suppliers, primarily involved in the supply chain for notebooks and other PCs, anticipate demand will recover around mid-2024. Save my User ID and Password Some ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

Radiation dosimetry is pivotal in ensuring both patient safety during radiotherapy and efficient monitoring in industrial and environmental settings. Metal Oxide Semiconductor Field-Effect Transistors ...